Carrier recombination processes in GaAsN: From the dilute limit to alloying

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 365-368

  Intartaglia, R ^a   Taliercio, T ^a   Lefebvre, P ^a   Valvin, P ^a   Bretagnon, T ^a   Guillet, T ^a   Gil, B ^a   Tisch, U ^b   Finkman, E ^b   Salzman, J ^b   Pinault, M A ^c   Tournie E ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; EPITAXIAL GROWTH; EXCITONS; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY;

CARRIER RECOMBINATION; CARRIER TRANSFER; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10644256626     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040867     Document Type: Article

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