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Volumn 20, Issue 5, 2002, Pages 2091-2095
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Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL STRUCTURE;
LATTICE CONSTANTS;
LIGHT EMISSION;
MOLECULAR BEAM EPITAXY;
NITROGEN;
PHOTOLUMINESCENCE;
PLASMAS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GALLIUM COMPOUNDS;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
GALLIUM ARSENIDE;
GALLIUM INDIUM NITROGEN ARSENIDE;
LOW TEMPERATURE PHOTOLUMINESCENCE EMISSION;
RADIO FREQUENCY NITROGEN PLASMA SOURCE;
SOLID-SOURCE MOLECULAR BEAM EPITAXY;
COMPOSITION EFFECTS;
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EID: 0036026402
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1508818 Document Type: Article |
Times cited : (10)
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References (11)
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