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Volumn 20, Issue 5, 2002, Pages 2091-2095

Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; LATTICE CONSTANTS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 0036026402     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1508818     Document Type: Article
Times cited : (10)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.