Formation mechanisms of polar and non-polar amorphous oxide-semiconductor interfaces

Surface Science

Volumn 602, Issue 13, 2008, Pages

  Chagarov, Evgueni A ^a   Kummel, Andrew C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Amorphous oxide; Density functional theory; High oxide; Molecular dynamics; Oxide semiconductor interface

Indexed keywords

ALUMINUM; DYNAMICS; MECHANISMS; MOLECULAR DYNAMICS; QUANTUM CHEMISTRY;

AMORPHOUS OXIDES; ATOMIC STRUCTURES; DENSITY-FUNCTIONAL THEORY (DFT); FORMATION MECHANISMS; MOLECULAR DYNAMICS SIMULATIONS (MDS); NON-POLAR; SEMICONDUCTOR INTERFACES;

DENSITY FUNCTIONAL THEORY;

EID: 45849085748     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.04.026     Document Type: Article

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