1μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737S/μm (Electronics Letters (2008) 44:7 (498-500))

Electronics Letters

Volumn 44, Issue 21, 2008, Pages 1283-1284

  Hill, R J W ^a   Droopad, R ^a   Moran, D A J ^a   Li, X ^a   Zhou, H ^a   MacIntyre, D ^a   Thoms, S ^a   Ignatova, O ^a   Asenov, A ^a   Rajagopalan, K ^a   Fejes, P ^a   Thayne, I G ^a   Passlack, M ^a  

^a NONE

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EID: 53849136262     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082747     Document Type: Erratum

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