Density functional theory study of first-layer adsorption of ZrO2 and HfO2 on Ge(1 0 0)

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 249-258

  Grassman, T J ^a   Bishop, S R ^a   Kummel, A C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ge; Germanium; Hafnium oxide; High k dielectric; MOSFET; Semiconductor oxide interface; Zirconium oxide

Indexed keywords

ADSORBATES; ADSORPTION; CHEMICAL BONDS; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GAS ADSORPTION; GEOMETRY; GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; HYDROGEN; HYDROGEN BONDS; METALLIC COMPOUNDS; METALS; MOSFET DEVICES; OXIDES; OXYGEN; PASSIVATION; PROGRAMMING THEORY; SEMICONDUCTOR MATERIALS; SURFACE STRUCTURE; TRANSITION METAL COMPOUNDS; TRANSITION METALS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

GE; HAFNIUM OXIDE; HIGH-K DIELECTRIC; MOSFET; SEMICONDUCTOR-OXIDE INTERFACE; ZIRCONIUM OXIDE;

SEMICONDUCTING GERMANIUM;

EID: 59049097963     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.12.087     Document Type: Article

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