In situ study of surface reactions of atomic layer deposited Lax Al2-x O3 films on atomically clean In0.2 Ga0.8 As

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Aguirre Tostado, F S ^a   Milojevic, M ^a   Lee, B ^a   Kim, J ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; CONCENTRATION (PROCESS); GALLIUM; LANTHANUM; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SURFACE REACTIONS; ULTRATHIN FILMS;

AL CONCENTRATIONS; ATOMIC LAYER DEPOSITED; ATOMIC LAYERS; HIGH RESOLUTIONS; IN SITU STUDIES; IN-SITU; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 55149106998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009303     Document Type: Article

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