Threshold voltage shifts in Si passivated (100)Ge p -channel field effect transistors: Insights from first-principles modeling

Applied Physics Letters

Volumn 91, Issue 2, 2007, Pages

  Pourtois, G ^a   Houssa, M ^a   De Jaeger, B ^a   Kaczer, B ^a   Leys, F ^a   Meuris, M ^a   Caymax, M ^a   Groeseneken, G ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ENERGY GAP; PASSIVATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; THRESHOLD VOLTAGE; WORK FUNCTION;

FUNCTION SHIFTS; SILICON LAYERS; THRESHOLD VOLTAGE SHIFTS;

FIELD EFFECT TRANSISTORS;

EID: 34547152041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756367     Document Type: Article

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