Experimental and theoretical study of Ge surface passivation

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2267-2273

  Houssa, M ^a,b   Pourtois, G ^a   Kaczer, B ^a   De Jaeger, B ^a   Leys, F E ^a   Nelis, D ^a   Paredis, K ^c   Vantomme, A ^c   Caymax, M ^a   Meuris, M ^a   Heyns, M M ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c KU LEUVEN   (Belgium)

Author keywords

Electrical properties; First principles modeling; Ge surface passivation; Physico chemical analysis

Indexed keywords

DEPOSITION; GATE DIELECTRICS; PASSIVATION; SILICON; SURFACE TREATMENT; THIN FILMS;

FIRST-PRINCIPLES MODELING; GE SURFACE PASSIVATION; PHYSICO-CHEMICAL ANALYSIS;

GERMANIUM;

EID: 34248660839     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.114     Document Type: Article

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