Ultrathin epitaxial germanium on crystalline oxide metal-oxide- semiconductor-field-effect transistors

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Preisler, E J ^a   Guha, S ^a   Perkins, B R ^b   Kazazis, D ^b   Zaslavsky, A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE STRUCTURES; GERMANIUM-ON-INSULATOR (GOI); SILICON SUBSTRATES; SOLID-PHASE EPITAXIAL GROWTH;

BACKSCATTERING; CHEMICAL VAPOR DEPOSITION; CRYOSTATS; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; INORGANIC COATINGS; MOLECULAR BEAM EPITAXY; MOS DEVICES; MOSFET DEVICES; PHOTOLUMINESCENCE;

GERMANIUM;

EID: 20844443606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1941451     Document Type: Article

References (10)

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10. Our simulations were carried out using Silvaco's process simulation Athena (VER. 5.2.0.R) and device simulation Atlas (VER. 5.7.45.C) software packages.