Characterization of Al2O3 thin films on GaAs substrate grown by atomic layer deposition

Chinese Physics Letters

Volumn 23, Issue 7, 2006, Pages 1929-1931

  Lu, Hong Liang ^a   Li, Yan Bo ^b   Xu, Min ^a   Ding, Shi Jin ^a   Sun, Liang ^a   Zhang, Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

^b HEBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMORPHOUS FILMS; ATOMS; FILM GROWTH; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC-LAYER DEPOSITION; GAAS SUBSTRATES; GROWTH CYCLE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACE LAYER; THIN-FILMS; X-RAY PHOTOELECTRONS;

ATOMIC LAYER DEPOSITION;

EID: 33745595062     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/7/075     Document Type: Article

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