High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Renault, O ^a   Fourdrinier, L ^a,d   Martinez, E ^a   Clavelier, L ^a   Leroyer, C ^a   Barrett, N ^b   Crotti, C ^c  

^a CEA LETI   (France)

^b DIF   (France)

^c CNR   (Italy)

^d LITEN/DTNM17 ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; HAFNIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SURFACE CHEMISTRY; SYNCHROTRON RADIATION; X RAYS;

BONDING STATES; GATE STACKS; HAFNIUM GERMANATE; HIGH RESOLUTION PHOTOELECTRON SPECTROSCOPY;

GATES (TRANSISTOR);

EID: 33846969523     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435512     Document Type: Article

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