Analysis of DC-RF dispersion in AlGaN/GaN HFETs using RF waveform engineering

IEEE Transactions on Electron Devices

Volumn 56, Issue 1, 2009, Pages 13-19

  Roff, Chris ^a   Benedikt, Johannes ^a   Tasker, Paul J ^a   Wallis, David J ^b   Hilton, Keith P ^b   Maclean, Jessica O ^b   Hayes, David G ^b   Uren, Michael J ^b   Martin, Trevor ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

Current collapse; Microwave field effect transistors (FETs); Microwave measurements; Semiconductor device modeling

Indexed keywords

ALGAN/GAN HETEROJUNCTION; ALGAN/GAN HFETS; CARRIER VELOCITY SATURATION; CURRENT COLLAPSE; DISPERSIVE BEHAVIORS; GATE REGION; HIGH ELECTRIC FIELDS; I-V MEASUREMENTS; LOAD IMPEDANCE; MICROWAVE FIELD-EFFECT TRANSISTORS (FETS); PHYSICAL MODELING; PUNCH-THROUGH; RADIO FREQUENCIES; RF DISPERSION; SEMICONDUCTOR DEVICE MODELING; WAVE FORMS;

ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; GALLIUM NITRIDE; HETEROJUNCTIONS; MESFET DEVICES; MICROWAVE CIRCUITS; MICROWAVE MEASUREMENT; MICROWAVES; MODELS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

FIELD EFFECT TRANSISTORS;

EID: 68949113524     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2008674     Document Type: Article

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