Dynamic Current-Voltage Characteristics of III-N HFETs

IEEE Electron Device Letters

Volumn 24, Issue 11, 2003, Pages 680-682

  Koudymov, A ^a   Simin, G ^a   Khan, M Asif ^a   Tarakji, A ^b   Gaska, R ^b   Shur, M S ^c  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

AlGaN; Current collapse; GaN; HEMTs; HFETs

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; HETEROJUNCTIONS; VOLTAGE MEASUREMENT;

CHARGE TRAPPING; CURRENT COLLAPSE; PULSED RETURN CURRENT METHOD;

FIELD EFFECT TRANSISTORS;

EID: 0242578074     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.818889     Document Type: Article

References (13)

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