p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

IEEE Electron Device Letters

Volumn 23, Issue 10, 2002, Pages 588-590

  Coffie, R ^b   Buttari, D ^b   Heikman, S ^b   Keller, S ^b   Chini, A ^c   Shen, L ^b   Mishra, U K ^a,b  

^a IEEE

^b University of California   (United States)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

GaN; MODFETs; Passivation; RF dispersion

Indexed keywords

CIRCUIT OSCILLATIONS; EVAPORATION; GATES (TRANSISTOR); MICROWAVES; NATURAL FREQUENCIES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; VOLTAGE CONTROL;

CURRENT-GAIN CUTOFF FREQUENCY; LOW-POWER REACTIVE ION ETCHING GATE RECESS; RADIO FREQUENCY-DISPERSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036806424     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.803764     Document Type: Article

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