High performance deeply-recessed GaN power HEMTs without surface passivation

Electronics Letters

Volumn 42, Issue 9, 2006, Pages 555-556

  Shen, L ^a   Chakraborty, A ^a   McCarthy, L ^a   Fichtenbaum, N ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; MICROWAVES; PASSIVATION; SILICON CARBIDE;

GATE LEAKAGE CURRENT; MICROWAVE POWER; POWER DENSITY; SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33646410987     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20064262     Document Type: Article

References (7)

1. Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K.: ' High-power AlGaN/GaN HEMTs for Ka-band applications ', IEEE Electron Device Lett., 2005, 26, (11), p. 781-783
2. Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., and Eastman, L.F.: ' The effect of surface passivation on the microwave characteristics of AlGaN/GaN HFET's ', IEEE Electron Device Lett., 2000, 21, (6), p. 268-270
3. Mitrofanov, O., Manfra, M., and Weimann, N.: ' Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy ', Appl. Phys. Lett., 2003, 82, p. 4361-4363
4. Kordos, P., Bernat, J., and Marso, M.: ' Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT ', Microelectron. J., 2005, 36, p. 438-441
5. Coffie, R., Buttari, D., Heikman, S., Keller, S., Chini, A., Shen, L., and Mishra, U.K.: ' p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) ', IEEE Electron Device Lett., 2002, 23, (10), p. 588-590
6. Shen, L., Coffie, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S.P., and Mishra, U.K.: ' Unpassivated GaN/AlGaN/GaN power HEMTs with dispersion controlled by epitaxial layer design ', J. Electron. Mater., 2004, 33, (5), p. 422-425
7. Shen, L., Coffie, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S.P., and Mishra, U.K.: ' High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation ', IEEE Electron Device Lett., 2004, 25, (1), p. 7-9