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Volumn 2005, Issue , 2005, Pages 365-368

GaN H-FET development at QinetiQ

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; POWER AMPLIFIERS; X RAY ANALYSIS;

EID: 33847203668     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (6)
  • 1
    • 13444306440 scopus 로고    scopus 로고
    • Composition measurement in strained AlGaN/GaN epitaxial layers using X-ray diffraction
    • D. J. Wallis, A. M. Keir, R. S. Balmer, D. E. J. Soley, and T. Martin, "Composition measurement in strained AlGaN/GaN epitaxial layers using X-ray diffraction," Applied Physics Letters, vol. 85, pp. 6359-6361, 2004.
    • (2004) Applied Physics Letters , vol.85 , pp. 6359-6361
    • Wallis, D.J.1    Keir, A.M.2    Balmer, R.S.3    Soley, D.E.J.4    Martin, T.5
  • 2
    • 13344268973 scopus 로고    scopus 로고
    • Measurements of unity gain cut-off frequency and saturation velocity of a GaN HEMT transistor
    • C. H. Oxley and M. J. Uren, "Measurements of unity gain cut-off frequency and saturation velocity of a GaN HEMT transistor," IEEE Trans. Electron Devices, vol. 52, pp. 165-169, 2005.
    • (2005) IEEE Trans. Electron Devices , vol.52 , pp. 165-169
    • Oxley, C.H.1    Uren, M.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.