Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 416-418

  Riedel, Gernot J ^a   Pomeroy, J W ^a   Hilton, K P ^b   Maclean, J O ^b   Wallis, D J ^b   Uren, M J ^b   Martin, T ^b   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

AlGaN; Communication; FETs; GaN; Heat diffusion; High electron mobility transistors (HEMTs); Nanosecond; Pulsed; Radar; Raman spectroscopy; Reliability; Temperature; Thermography

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE MEASUREMENT; THERMAL DIFFUSION; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

ADIABATIC HEATING; THERMAL DYNAMICS; TIME-RESOLVED RAMAN THERMOGRAPHY;

ELECTRON DEVICES;

EID: 43549123910     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919779     Document Type: Article

References (13)

1. H. Kim, V. Tilak, B. M. Green, J. A. Smart, W. J. Schaff, J. R. Shealy, and L. F. Eastman, 'Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate," Phys. Stat. Sol. A - Applied Research, vol. 188, no. 1, pp. 203-206, 2001.
2. F. van Raay, R. Quay, R. Kiefer, F. Benkhelifa, B. Raynor, W. Pletschen, M. Kuri, H. Massler, S. Muller, M. Darnmann, M. Mikulla, M. Schlechtweg, and G. Weimann, "A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 460-462, Jul. 2005.
3. D. L. Blackburn, "Temperature measurements of semiconductor devices - A review," in Proc. 20th IEEE Semicond. Thermal Meas. Manag. Symp., 2004, pp. 70-80.
4. M. Kuball, J. M. Hayes, M. J. Uren, T. Martin, J. C. H. Birbeck, R. S. Balmer, and B. T. Hughes, "Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy," IEEE Electron Device Lett., vol. 23, no. 1, pp. 7-9, Jan. 2002.
5. T. Palacios, C. S. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "High-performance E-mode AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 27, no. 6, pp. 428-430, Jun. 2006.
6. A. M. Darwish, A. J. Bayba, and H. A. Hung, "Thermal resistance calculation of AlGaN-GaN devices," IEEE Trans. Microw. Theory Tech. vol. 52, no. 11, pp. 2611-2620, Nov. 2004.
7. Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. A. Khan, "High-power operation of III-N MOSHFET RF switches," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 12, pp. 850-852, Dec. 2005.
8. J. W. Lee and K. J. Webb, "A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC," IEEE Trans. Microw. Theory Tech. vol. 52, no. 1, pp. 2-9, Jan. 2004.
9. J. M. Barker, D. K. Ferry, D. D. Koleske, and R. J. Shul, "Bulk GaN and AlGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models," J. Appl. Phys., vol. 97, no. 6, p. 063-705, 2005.
10. M. Kuball, G. J. Riedel, J. W. Pomeroy, A. Sarua, M. J. Uren, T. Martin, K. P. Hilton, J. O. Maclean, and D. J. Wallis, "Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy," IEEE Electron Device Lett., vol. 28, no. 2, pp. 86-89, Feb. 2007.
11. S. Rajasingam, J. W. Pomeroy, M. Kuball, M. J. Uren, T. Martin, D. C. Herbert, K. P. Hilton, and R. S. Balmer, "Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs," IEEE Electron Device Lett., vol. 25, no. 7, pp. 456-458, Jul. 2004.
12. A. Sarua, H. F. Ji, M. Kuball, M. J. Uren, T. Martin, K. P. Hilton, and R. S. Balmer, "Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures," IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2438-2447, Oct. 2006.
13. C. W. Ulbrich, "Exact electric analogy to the Vernotte hypothesis," Phys. Rev., vol. 123, no. 6, pp. 2001-2002, Sep. 1961.