Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors

Journal of Applied Physics

Volumn 98, Issue 12, 2005, Pages

  Horio, Kazushige ^a   Yonemoto, Ken ^a   Takayanagi, Hiroki ^a   Nakano, Hiroyuki ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT COLLAPSE; GAN FIELD EFFECT TRANSISTORS; QUASIPULSED CURRENT-VOLTAGE (I-V) CURVES; SEMI-INSULATING BUFFER LAYER;

ELECTRIC POTENTIAL; ELECTRONS; INSULATING MATERIALS; SEMICONDUCTOR MATERIALS; TRANSIENTS;

BUFFER AMPLIFIERS;

EID: 29744450720     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2141653     Document Type: Review

References (21)

1. U. K. Mishra, P. Parikh, and Y.-F. Wu, Proc. IEEE 90, 1022 (2002).
2. S. C. Binari, P. B. Klein, and T. E. Kazior, Proc. IEEE 90, 1048 (2002).
3. M. A. Khan, M. S. Shur, Q. C. Chen, and J. N. Kuznia, Electron. Lett. 30, 2175 (1994).
4. P. B. Klein, J. A. Freitas, Jr., S. C. Binari, and A. E. Wickenden, Appl. Phys. Lett. 75, 4016 (1999).
5. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
6. G. Koley, V. Tilak, L. F. Eastman, and M. G. Spencer, IEEE Trans. Electron Devices 50, 886 (2003).
7. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, IEEE Trans. Electron Devices 50, 2015 (2003).
8. G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rarnpazzo, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, IEEE Trans. Electron Devices 51, 1554 (2004).
9. N. Braga, R. Mickevicins, R. Gaska, M. S. Shur, M. A. Khan, and G. Simin, in Proceedings of the CSIC Symposium (IEEE, New York, 2004), p. 287.
10. K. Horio and K. Yonemoto, Phys. Status Solidi C 2, 2635 (2005).
11. K. Horio and Y. Fuseya, IEEE Trans. Electron Devices 41, 1340 (1994).
12. K. Kunihiro and Y. Ohno, IEEE Trans. Electron Devices 43, 1336 (1996).
13. S. H. Lo and C. P. Lee, IEEE Trans. Electron Devices 41, 1504 (1994).
14. K. Horio and T. Yamada, IEEE Trans. Electron Devices 46, 648 (1999).
15. G. Verzellesi, A. Mazzanti, A. F. Basile, A. Boni, E. Zanoni, and C. Canali, IEEE Trans. Electron Devices 50, 1733 (2003).
16. Y. Kazami, D. Kasai, and K. Horio, IEEE Trans. Electron Devices 51, 1760 (2004).
17. W. Kruppa, S. C. Binari, and K. Doverspike, Electron. Lett. 31, 1951 (1995).
18. H. Morkoc, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
19. M. Farahmand, C. Garetto, E. Bellotti, K. F. Brennan, M. Goano, E. Ghillino, G. Ghione, J. D. Albrecht, and P. P. Ruden, IEEE Trans. Electron Devices 48, 535 (2001).
20. T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, G. S. Simin, and M. S. Khan, Solid-State Electron. 47, 111 (2003).
21. A. Koudymov, G. Simin, M. A. Khan, A. Tarakji, R. Gaska, and M. S. Shur, IEEE Electron Device Lett. 24, 680 (2003).