Analysis of DC-RF dispersion in AlGaN/GaN HFET's using pulsed I-V and time-domain waveform measurements

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 503-506

  McGovern, Peter ^a   Benedikt, Johannes ^a   Tasker, Paul J ^a   Powell, J ^b   Hilton, K P ^b   Glasper, J L ^b   Balmer, R S ^b   Martin, T ^b   Uren, M J ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

Current slump; DC RF dispersion; Gallium nitride; GaN; HEMT; Hetrojunction field effect transistor

Indexed keywords

ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; WAVEFORM ANALYSIS;

CURRENT SLUMP; DC-RF DISPERSION; HETROJUNCTION FIELD EFFECT TRANSISTORS; PULSED I-V MEASUREMENTS;

DISPERSION (WAVES);

EID: 33749265887     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516641     Document Type: Conference Paper

References (8)

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6. R. S. Balmer, K. P. Hilton, M. J. Uren, D. J. Wallis, A. Wells, M. Missous, and T. Martin, "AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer," Phys. Stat. Sol. (c), vol. 0, pp. 2331-2334, 2003
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