Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Volumn , Issue , 2006, Pages 43-45

  Roff, Chris ^a   McGovern, Peter ^a   Benedikt, Johannes ^a   Tasker, Paul J ^a   Balmer, R S ^b   Wallis, D J ^b   Hilton, K P ^b   Maclean, J O ^b   Hayes, D G ^b   Uren, M J ^b   Martin, T ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HETEROJUNCTIONS; TIME DOMAIN ANALYSIS; WAVEFORM ANALYSIS;

DC-RF DISPERSION; RF FREQUENCIES; WAVEFORM MEASUREMENTS;

FIELD EFFECT TRANSISTORS;

EID: 41549113867     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282745     Document Type: Conference Paper

References (8)

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7. th European Microwave Conference, 1994, pp. 1367-1372.
8. M.J. Uren et al., "Punch-Through in Short Channel AlGaN/Gan HFETs," IEEE Trans. Elec. Dev., vol. in press, 2006.