Direct demonstration of the 'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs

Solid-State Electronics

Volumn 49, Issue 2, 2005, Pages 279-282

  Wells, A M ^a   Uren, M J ^b   Balmer, R S ^b   Hilton, K P ^b   Martin, T ^b   Missous, M ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

AlGaN; Current collapse; Field effect transistors; GaN; III V semiconductors; Surface trapping; Virtual gate; Wide bandgap semiconductors

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; GALLIUM NITRIDE; MICROWAVE DEVICES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN; CURRENT COLLAPSE; GAN; SURFACE TRAPPING; VIRTUAL GATE; WIDE BANDGAP SEMICONDUCTORS;

FIELD EFFECT TRANSISTORS;

EID: 9544239362     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.10.003     Document Type: Letter

References (12)

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