Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

IEEE Electron Device Letters

Volumn 25, Issue 7, 2004, Pages 456-458

  Rajasingam, S ^a   Pomeroy, J W ^a   Kuball, M ^a   Uren, M J ^b   Martin, T ^b   Herbert, D C ^b   Hilton, K P ^b   Balmer, R S ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD MEASUREMENT; ELECTRIC POTENTIAL; FINITE DIFFERENCE METHOD; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; MONTE CARLO METHODS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE MEASUREMENT;

ALUMINUM GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; SOURCE DRAIN VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 3342912289     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.830267     Document Type: Article

References (8)

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