Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6414-6419

  Mitrofanov, Oleg ^a   Manfra, Michael ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER TRAPS; ELECTRON DYNAMICS; IONIZATION ENERGY; POOLE-FRENKEL (PF) ELECTRON EMISSION;

ACTIVATION ENERGY; BINDING ENERGY; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRON GAS; ELECTRON TRAPS; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; IONIZATION; KINETIC ENERGY; MATHEMATICAL MODELS; PROBABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2942687641     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1719264     Document Type: Article

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