Probing Individual Localization Centers in an InGaN/GaN Quantum Well

Physical Review Letters

Volumn 92, Issue 10, 2004, Pages

  Schomig H ^a   Halm, S ^a,b   Forchel, A ^a   Bacher, G ^a,b   Off, J ^c   Scholz, F ^c,d  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

^d UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CRYOSTATS; ELECTRIC FIELDS; GROUND STATE; LITHOGRAPHY; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL MICROSCOPY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SCANNING; SCREENING; SEMICONDUCTING INDIUM;

EXCITATION DENSITY; LOCALIZATION EFFECTS; SPATIAL RESOLUTION; STOKES SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2142771755     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.106802     Document Type: Article

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