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Volumn 106, Issue 11, 1998, Pages 739-743

Theory of Ga, N and H terminated GaN (0 0 0 1)/(0 0 0 1̄) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRIC PROPERTIES; INTERFACIAL ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES;

EID: 0032089934     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00119-7     Document Type: Article
Times cited : (45)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.