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Volumn 72, Issue 9, 1998, Pages 1078-1080

Real time control of InxGa1-xN molecular beam epitaxy growth

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[No Author keywords available]

Indexed keywords


EID: 0000658334     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120970     Document Type: Article
Times cited : (82)

References (21)
  • 18
    • 22244479159 scopus 로고    scopus 로고
    • Note that we did not succeed in measuring the In composition above 620°C due to a damping of the RHEED intensity oscillations
    • Note that we did not succeed in measuring the In composition above 620°C due to a damping of the RHEED intensity oscillations.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.