Calculation of quantum well laser gain spectra

Optics Express

Volumn 2, Issue 4, 1998, Pages 119-124

  Chow, W W ^a   Girndt, A ^b   Koch, S W ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; KINETIC THEORY; LASER THEORY; MATHEMATICAL MODELS; POLARIZATION; QUANTUM THEORY; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS;

CORRELATION EFFECTS; LASER STRUCTURES; QUANTUM KINETIC THEORY; RABI FREQUENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0000071949     PISSN: 10944087     EISSN: None     Source Type: Journal    
DOI: 10.1364/OE.2.000119     Document Type: Article

References (17)

1. B. Zee, "Broadening mechanism in semiconductor (Gaas) lasers: limitations to single mode power emission," IEEE J. Quantum Electron. QE-14, 727 (1978).
2. M. Yamada and Y. Suematsu, "Analysis of gain suppression in undoped injection lasers," J. Appl. Phys. 52, 2653(1981).
3. W. W. Chow, P. M. Smowton, P. Blood, A. Girndt, F. Jahnke and S. W. Koch, "Comparison of experimental and theoretical GaInP quantum well gain spectra," Appl. Phys. Lett. 71, 157 (1997).
4. M. Lindberg and S. W. Koch, "Effective Bloch equations for semiconductors," Phys. Rev. B38, 3342 (1988).
5. H. Haug and S. W. Koch, Quantum Theory of the Optical and Electronic Properties of Semi-conductors, 3rd ed. (World Scientific, Singapore, 1994).
6. W. W. Chow, S. W. Koch and M. Sargent III, Semiconductor-Laser Physics (Springer Verlag, Berlin, 1994).
7. T. Rappen, U-G Peter, M. Wegener and W. Schäfer, "Polarization dependence of dephasing processes: A probe for many-body effects," Phys. Rev. B49, 10774 (1994).
8. F. Rossi, S. Hass and T. Kuhn, "Ultrafast relaxation of photoexcited carriers: The role of coherence in the generation process," Phys. Rev. Lett. 72, 152 (1994).
9. A. Knorr, S. Hughes, S. W. Koch, R. Indik, M. Mlejnek, R. Binder, J. V. Moloney, "The influence of electron-hole Scattering on linear gain spectra," Solid.State Commun. 100, 555 (1996).
10. W. W. Chow, A. Knorr, S. Hughes, A. Girndt and S. W. Koch, "Carrier correlation effects in a quantum-well semiconductor laser medium," IEEE J. Sel. Top. Quantum Electron. 3, 136 (1997).
11. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, "P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)," Jpn. J. Appl. Phys. 28, L2112 (1989).
12. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimota and H, Kiyoku, "Room-termperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes," Appl. Phys. Letts. 69, 4056 (1996).
13. → method for strained wurzite semiconductors," Phys. Rev. B54, 2491 (1996).
14. A. F. Wright and J. S. Nelson, "Consistent structural properties for AlN, GaN and InN," Phys. Rev. B51, 7866 (1995) and references.
15. S. J. Jenkins, G. P. Srivastava and J. C. Inkson, "Simple approach to self-energy corrections in semiconductors and insulators," Phys. Rev. B48, 4388 (1993).
16. S. H. Wei and A. Zunger, "Valence-band splittings and band offsetsof AlN, GaN and InN," Appl. Phys. Letts. 69, 2719 (1996).
17. 1-xN quantum-well lasers," IEEE J. Quantum Electron. 32, 859, (1996).