Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

Applied Physics Letters

Volumn 75, Issue 7, 1999, Pages 950-952

  Wang, J ^a   Nozaki, M ^a   Lachab, M ^a   Ishikawa, Y ^a   Qhalid Fareed, R S ^a   Wang, T ^a   Hao, M ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ETCHING; ION BEAMS; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES;

FOCUSED ION-BEAM (FIB) IRRADIATION; INDIUM GALLIUM NITRIDE; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) SELECTIVE GROWTH; PHOTOASSISTED WET CHEMICAL ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032614046     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124564     Document Type: Article

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