Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 8979-8985

  Ruterana, P ^a   Kret, S ^a,b   Vivet, A ^c   MacIejewski, G ^c   Dluzewski, P ^d  

^a LABORATOIRE CRISMAT   (France)

^b INSTITUTE OF PHYSICS   (Poland)

^c Institut Universitaire de Technologie   (France)

^d INSTITUTE OF FUNDAMENTAL TECHNOLOGICAL RESEARCH   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION CHANGES; COMPOSITION FLUCTUATIONS; FINITE ELEMENT MODELING; GROWTH METHOD; INGAN QUANTUM WELLS; METAL-ORGANIC; STRAIN ANALYSIS; VAPOR PHASE EPITAXIAL;

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAMS; VAPORS;

FINITE ELEMENT METHOD;

EID: 0036607387     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473666     Document Type: Article

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