Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Lozano, J G ^a   Sanchez A M ^a   Garcia R ^a   Gonzalez, D ^a   Briot, O ^b   Ruffenach, S ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HETEROJUNCTIONS; MORPHOLOGY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

INNGAN INTERFACE; PLASTIC RELAXATION; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646128716     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195642     Document Type: Article

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