CMOS RF design for reliability using adaptive gate-source biasing

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2348-2353

  Yuan, J S ^a   Tang, H ^a  

^a University of Central Florida   (United States)

Author keywords

Adaptive biasing; Channel hot electron (CHE); Gate oxide breakdown; Negative bias temperature instability (NBTI); Power amplifier; Power added efficiency; Radio frequency (RF); Third order intercept point

Indexed keywords

DRAIN CURRENT; MOS DEVICES; POWER AMPLIFIERS; THRESHOLD VOLTAGE;

ADAPTIVE BIASING; CHANNEL HOT ELECTRON (CHE); GATE OXIDE BREAKDOWN; NEGATIVE-BIAS TEMPERATURE INSTABILITY (NBTI); POWER AMPLIFIER; POWER-ADDED EFFICIENCY; RADIO FREQUENCY (RF); THIRD-ORDER INTERCEPT POINT;

AMPLIFIERS (ELECTRONIC);

EID: 50549089988     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.928024     Document Type: Article

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