Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 103-107

  Li, E ^a   Rosenbaum, E ^a   Register, L F ^a   Tao, J ^a   Fang, P ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; HOT CARRIERS; RELIABILITY; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS;

CIRCUIT LIFETIME;

MOSFET DEVICES;

EID: 0033741695     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (14)