Field and temperature acceleration model for time-dependent dielectric breakdown

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 220-229

  Kimura, Mikihiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Mos capacitors; Oxide breakdown; Oxide reliability; Sio2 films; TDDB

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; MOS CAPACITORS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SILICA; THIN FILMS;

THERMOCHEMICAL BREAKDOWN; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ULSI CIRCUITS;

EID: 0032741335     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737462     Document Type: Article

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