MOS RF reliability subject to dynamic voltage stress - Modeling and analysis

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1751-1758

  Yu, Chuanzhao ^a   Yuan, J S ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

Breakdown (BD); Circuit reliability; Hot carriers (HCs); MOS devices; Power amplifiers; Stress

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; HOT CARRIERS; MATHEMATICAL MODELS; POWER AMPLIFIERS; RELIABILITY;

CIRCUIT RELIABILITY; VOLTAGE STRESS;

MOSFET DEVICES;

EID: 23344449696     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852546     Document Type: Article

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