Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 3, 2005, Pages 501-507

  Naseh, Sasan ^a,b,c   Jamal Deen, M ^a,c,d,e   Chen, Chih Hung ^a,c  

^a IEEE   (Canada)

^b Chaires de recherche du Canada   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

^d ELECTROCHEMICAL SOCIETY   (Canada)

^e EIC (Engineering Institute of Canada)   (Canada)

Author keywords

Hot carriers; Linearity; Low noise amplifier (LNA); Matching; Noise figure; Reliability; RF CMOS

Indexed keywords

LINEARITY; LOW-NOISE AMPLIFIER (LNA); MATCHING; NOISE FIGURE; RF CMOS;

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTANCE; HOT CARRIERS; MOS DEVICES; TRANSISTORS;

AMPLIFIERS (ELECTRONIC);

EID: 29344468684     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.853502     Document Type: Article

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