A model for gate-oxide breakdown in CMOS inverters

IEEE Electron Device Letters

Volumn 24, Issue 2, 2003, Pages 114-116

  Rodriguez R ^a,b   Stathis, J H ^b   Linder, B P ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM RESEARCH   (United States)

Author keywords

CMOS; Dielectric breakdown; Hard breakdown (HBD); Leakage currents; Oxide breakdown; Oxide reliability

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC INVERTERS; LEAKAGE CURRENTS;

DIELECTRIC BREAKDOWN;

CMOS INTEGRATED CIRCUITS;

EID: 0038732515     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.808155     Document Type: Article

References (8)

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