CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 59-67

  Yu, Chuanzhao ^a,b   Yuan, J S ^a  

^a University of Central Florida   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

CMOS oscillators; Dielectric breakdown (BD); Fast transient charge effect; Leakage current; Low noise amplifier (LNA); Reliability

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC BREAKDOWN; ELECTRIC INVERTERS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); TRANSISTORS;

FAST TRANSIENT CHARGE-TRAPPING EFFECT; LOW-NOISE AMPLIFIER; NOISE FIGURE;

CMOS INTEGRATED CIRCUITS;

EID: 33846055313     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887517     Document Type: Article

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