Mechanism for reduced NBTI effect under pulsed bias stress conditions

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 689-690

  Zhu, B ^a   Suehle, J S ^b   Bernstein, J B ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RELIABILITY;

CRITICAL TIME; DE-TRAPPING; HOLE TRAPPING; PHYSICAL MECHANISM; PULSE PERIOD; PULSE REPETITION FREQUENCIES; PULSED BIAS; TIME CONSTANTS;

INTEGRATED CIRCUITS;

EID: 84932111615     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315453     Document Type: Conference Paper

References (6)

1. B. Zhu, et al, "Negative bias temperature instability of deep sub-micron p-MOSFETs under pulsed bias stress, " Integrated Reliability Workshop Final Report, 2002, IEEE International, pp. 125-129.
2. O. Chen, et al, "Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling, " Electron Device Letters, IEEE, Vol. 23, 2002, pp. 734-736.
3. B. Abadeer, et al, "Behavior of NBTI under AC dynamic circuit conditions, " Reliability Physics Symposium Proceedings, 2003, pp. 17-22.
4. G. Chen, et al, "Dynamic NBTI of PMOS transistors and its Impact on MOSFET lifeline, " Reliability Physics Symposium Proceedings, 2003, pp. 196-202.
5. Huard, et al, "Evidence for hydrogen-related defects during NBTI stress in p-MOSFETs, " Reliability Physics Symposium Proceedings, 2003, pp. 178-182.
6. E. M. Vogel et al, "Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection, " J. Appl. Phys, Vol. 90, 2001, pp. 2338-2346.