Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2007, Pages 122-123

  Kim, Tae Hyoung ^a   Persaud, Randy ^a   Kim, Chris H ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIGITAL CIRCUITS; SILICON;

FREQUENCY DEGRADATION MEASUREMENTS; RING OSCILLATORS; SILICON ODOMETER;

MICROPROCESSOR CHIPS;

EID: 36949017858     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIC.2007.4342682     Document Type: Conference Paper

References (3)

1. M. Denais, A. Bravaix, V. Huard, et al., "On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's", IEDM, pp. 5.2.1-5.2.4, 2004.
2. V. Reddy, A. Krishnan, A. Marshal, et al., "Impact of negative bias temperature instability on digital oirouit reliability", IRPS, pp. 248-254, 2002.
3. S. Rangan, N. Mielke, E. Yeh, "Universal recovery behavior of negative bias temperature instability", IEDM, pp. 14.3.1-14.3.4, 2003.