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Volumn 103, Issue 11, 2008, Pages

Thermal behavior of the microstructure and the electrical properties of magnetron-sputtered high- k titanium silicate thin films

(2) Brassard, D a El Khakani, M A a

a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; LITHOGRAPHY; THICK FILMS; THIN FILMS; TITANIUM; TITANIUM COMPOUNDS;

ELECTRICAL (ELECTRONIC) PROPERTIES; TITANIUM SILICATES;

SILICATES;

EID: 45149111623 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2937241 Document Type: Article

Times cited : (8)

References (45)

1
- 45149091977
- Semiconductor Industry Association, The International Technology Roadmap for Semiconductors (ITRS), 2006 update, International SEMATECH, Austin, TX
- Semiconductor Industry Association, The International Technology Roadmap for Semiconductors (ITRS), 2006 update, International SEMATECH, Austin, TX.

2
- 31044455312
- RPPHAG 0034-4885 10.1088/0034-4885/69/2/R02.
- J. Robertson, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/69/2/ R02 69, 327 (2006).
- (2006) Rep. Prog. Phys. , vol.69 , pp. 327
- Robertson, J.¹

3
- 0035872897
- JAPIAU 0021-8979 10.1063/1.1361065.
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

4
- 23944508128
- IETDAI 0018-9383 10.1109/TED.2005.850642.
- C. H. Ng, C. S. Ho, S. F. S. Chu, and S. C. Sun, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2005.850642 52, 1399 (2005).
- (2005) IEEE Trans. Electron Devices , vol.52 , pp. 1399
- Ng, C.H.¹ Ho, C.S.² Chu, S.F.S.³ Sun, S.C.⁴

5
- 34248662430
- MIENEF 0167-9317.
- V. Martinez, C. Besset, F. Monsieur, L. Montes, and G. Ghibaudo, Microelectron. Eng. MIENEF 0167-9317 84, 2310 (2007).
- (2007) Microelectron. Eng. , vol.84 , pp. 2310
- Martinez, V.¹ Besset, C.² Monsieur, F.³ Montes, L.⁴ Ghibaudo, G.⁵

6
- 0035339020
- EDLEDZ 0741-3106 10.1109/55.919238.
- J. A. Babcock, S. G. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.919238 22, 230 (2001).
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 230
- Babcock, J.A.¹ Balster, S.G.² Pinto, A.³ Dirnecker, C.⁴ Steinmann, P.⁵ Jumpertz, R.⁶ El-Kareh, B.⁷

7
- 0036540911
- EDLEDZ 0741-3106 10.1109/55.992835.
- S. Van Huylenbroeck, S. Decoutere, R. Venegas, S. Jenei, and G. Winderickx, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.992835 23, 191 (2002).
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 191
- Van Huylenbroeck, S.¹ Decoutere, S.² Venegas, R.³ Jenei, S.⁴ Winderickx, G.⁵

8
- 33646699079
- APPLAB 0003-6951 10.1063/1.2202129.
- J. H. Park, W. S. Lee, N. J. Seong, S. G. Yoon, S. H. Son, H. M. Chung, J. S. Moon, H. J. Jin, S. E. Lee, J. W. Lee, H. D. Kang, Y. K. Chung, and Y. S. Oh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2202129 88, 192902 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 192902
- Park, J.H.¹ Lee, W.S.² Seong, N.J.³ Yoon, S.G.⁴ Son, S.H.⁵ Chung, H.M.⁶ Moon, J.S.⁷ Jin, H.J.⁸ Lee, S.E.⁹ Lee, J.W.¹⁰ Kang, H.D.¹¹ Chung, Y.K.¹² Oh, Y.S.¹³

9
- 24944478243
- APPLAB 0003-6951 10.1063/1.2048827.
- B. Y. Jang, B. J. Kim, S. J. Lee, K. J. Lee, S. Nahm, H. J. Sun, and H. J. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2048827 87, 112902 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 112902
- Jang, B.Y.¹ Kim, B.J.² Lee, S.J.³ Lee, K.J.⁴ Nahm, S.⁵ Sun, H.J.⁶ Lee, H.J.⁷

10
- 33646688638
- APPLAB 0003-6951 10.1063/1.2202689.
- M. Liu, Q. Fang, G. He, L. Li, L. Q. Zhu, G. H. Li, and L. D. Zhang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2202689 88, 192904 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 192904
- Liu, M.¹ Fang, Q.² He, G.³ Li, L.⁴ Zhu, L.Q.⁵ Li, G.H.⁶ Zhang, L.D.⁷

11
- 3142622979
- JVTAD6 0734-2101 10.1116/1.1722633.
- C. Durand, C. Vallee, V. Loup, O. Salicio, C. Dubourdieu, S. Blonkowski, M. Bonvalot, P. Holliger, and O. Joubert, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1722633 22, 655 (2004).
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 655
- Durand, C.¹ Vallee, C.² Loup, V.³ Salicio, O.⁴ Dubourdieu, C.⁵ Blonkowski, S.⁶ Bonvalot, M.⁷ Holliger, P.⁸ Joubert, O.⁹

12
- 0346534582
- JAPIAU 0021-8979 10.1063/1.371888.
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371888 87, 484 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 484
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

13
- 10444274952
- ASUSEE 0169-4332 10.1016/j.apsusc.2004.06.017.
- T. H. Moon, M. H. Ham, M. S. Kim, I. Yun, and J. M. Myoung, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/j.apsusc.2004.06.017 240, 105 (2005).
- (2005) Appl. Surf. Sci. , vol.240 , pp. 105
- Moon, T.H.¹ Ham, M.H.² Kim, M.S.³ Yun, I.⁴ Myoung, J.M.⁵

14
- 17444428140
- APAMFC 0947-8396 10.1007/s00339-003-2483-z.
- J. Wang, L. Zhao, N. H. Luu, D. Wang, and H. Nakashima, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s00339-003-2483-z 80, 1781 (2005).
- (2005) Appl. Phys. A: Mater. Sci. Process. , vol.80 , pp. 1781
- Wang, J.¹ Zhao, L.² Luu, N.H.³ Wang, D.⁴ Nakashima, H.⁵

15
- 20544446852
- JAPIAU 0021-8979 10.1063/1.1926399.
- S. Monaghan, J. C. Greer, and S. D. Elliott, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1926399 97, 114911 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 114911
- Monaghan, S.¹ Greer, J.C.² Elliott, S.D.³

16
- 33646510787
- APPLAB 0003-6951 10.1063/1.2193046.
- C. R. Essary, K. Ramani, V. Craciun, and R. K. Singha, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2193046 88, 182902 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 182902
- Essary, C.R.¹ Ramani, K.² Craciun, V.³ Singha, R.K.⁴

17
- 4344690089
- JVTAD6 0734-2101 10.1116/1.1755714.
- C. Krug and G. Lucovsky, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1755714 22, 1301 (2004).
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 1301
- Krug, C.¹ Lucovsky, G.²

18
- 20144383101
- THSFAP 0040-6090 10.1016/j.tsf.2004.11.191.
- K. Kukli, J. Aarik, T. Uustare, J. Lu, M. Ritala, A. Aidla, L. Pung, A. Harsta, M. Leskela, A. Kikas, and V. Sammelselg, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.11.191 479, 1 (2005).
- (2005) Thin Solid Films , vol.479 , pp. 1
- Kukli, K.¹ Aarik, J.² Uustare, T.³ Lu, J.⁴ Ritala, M.⁵ Aidla, A.⁶ Pung, L.⁷ Harsta, A.⁸ Leskela, M.⁹ Kikas, A.¹⁰ Sammelselg, V.¹¹

19
- 0037959796
- APPLAB 0003-6951 10.1063/1.1569985.
- S. Y. Lee, H. Kim, P. C. McIntyre, K. C. Saraswat, and J. S. Byun, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1569985 82, 2874 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2874
- Lee, S.Y.¹ Kim, H.² McIntyre, P.C.³ Saraswat, K.C.⁴ Byun, J.S.⁵

20
- 35348925971
- JAPIAU 0021-8979 10.1063/1.2786712.
- S. Pan, S. J. Ding, Y. Huang, Y. J. Huang, D. W. Zhang, L. K. Wang, and R. Liu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2786712 102, 073706 (2007).
- (2007) J. Appl. Phys. , vol.102 , pp. 073706
- Pan, S.¹ Ding, S.J.² Huang, Y.³ Huang, Y.J.⁴ Zhang, D.W.⁵ Wang, L.K.⁶ Liu, R.⁷

21
- 4043112164
- JAPIAU 0021-8979 10.1063/1.1766412.
- C. Durand, C. Dubourdieu, C. Vallee, V. Loup, M. Bonvalot, O. Joubert, H. Roussel, and O. Renault, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1766412 96, 1719 (2004).
- (2004) J. Appl. Phys. , vol.96 , pp. 1719
- Durand, C.¹ Dubourdieu, C.² Vallee, C.³ Loup, V.⁴ Bonvalot, M.⁵ Joubert, O.⁶ Roussel, H.⁷ Renault, O.⁸

22
- 0344193517
- THSFAP 0040-6090 10.1016/S0040-6090(02)01105-7.
- M. Kadoshima, M. Hiratani, Y. Shimamoto, K. Torii, H. Miki, S. Kimura, and T. Nabatame, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(02)01105-7 424, 224 (2003).
- (2003) Thin Solid Films , vol.424 , pp. 224
- Kadoshima, M.¹ Hiratani, M.² Shimamoto, Y.³ Torii, K.⁴ Miki, H.⁵ Kimura, S.⁶ Nabatame, T.⁷

23
- 10044271096
- APPLAB 0003-6951 10.1063/1.1812832.
- S. K. Kim, W.-D. Kim, K.-M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1812832 85, 4112 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4112
- Kim, S.K.¹ Kim, W.-D.² Kim, K.-M.³ Hwang, C.S.⁴ Jeong, J.⁵

24
- 22844452435
- SSTEET 0268-1242 10.1088/0268-1242/20/8/043.
- T. Busani and R. A. B. Devine, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/20/8/043 20, 870 (2005).
- (2005) Semicond. Sci. Technol. , vol.20 , pp. 870
- Busani, T.¹ Devine, R.A.B.²

25
- 0036749459
- JSGTEC 0928-0707 10.1023/A:1019912312654.
- M. J. Alam and D. C. Cameron, J. Sol-Gel Sci. Technol. JSGTEC 0928-0707 10.1023/A:1019912312654 25, 137 (2002).
- (2002) J. Sol-Gel Sci. Technol. , vol.25 , pp. 137
- Alam, M.J.¹ Cameron, D.C.²

26
- 0043093732
- EDLEDZ 0741-3106 10.1109/LED.2003.813381.
- S. J. Kim, B. J. Cho, M. F. Li, X. F. Yu, C. X. Zhu, A. Chin, and D. L. Kwong, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2003.813381 24, 387 (2003).
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 387
- Kim, S.J.¹ Cho, B.J.² Li, M.F.³ Yu, X.F.⁴ Zhu, C.X.⁵ Chin, A.⁶ Kwong, D.L.⁷

27
- 33646558003
- JVTAD6 0734-2101 10.1116/1.2180267.
- D. Brassard, D. K. Sarkar, M. A. El Khakani, and L. Ouellet, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.2180267 24, 600 (2006).
- (2006) J. Vac. Sci. Technol. A , vol.24 , pp. 600
- Brassard, D.¹ Sarkar, D.K.² El Khakani, M.A.³ Ouellet, L.⁴

28
- 3142599639
- JVTAD6 0734-2101 10.1116/1.1722530.
- D. Brassard, D. K. Sarkar, M. A. El Khakani, and L. Ouellet, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1722530 22, 851 (2004).
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 851
- Brassard, D.¹ Sarkar, D.K.² El Khakani, M.A.³ Ouellet, L.⁴

29
- 25144437862
- JAPIAU 0021-8979 10.1063/1.2039274.
- D. Brassard and M. A. El Khakani, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2039274 98, 054912 (2005).
- (2005) J. Appl. Phys. , vol.98 , pp. 054912
- Brassard, D.¹ El Khakani, M.A.²

30
- 34548019447
- EDLEDZ 0741-3106 10.1109/LED.2007.891754.
- D. Brassard, L. Ouellet, and M. A. El Khakani, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2007.891754 28, 261 (2007).
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 261
- Brassard, D.¹ Ouellet, L.² El Khakani, M.A.³

31
- 34548012649
- JAPIAU 0021-8979 10.1063/1.2759196.
- D. Brassard, L. Ouellet, and M. A. El Khakani, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2759196 102, 034106 (2007).
- (2007) J. Appl. Phys. , vol.102 , pp. 034106
- Brassard, D.¹ Ouellet, L.² El Khakani, M.A.³

32
- 33847130146
- THSFAP 0040-6090 10.1016/j.tsf.2006.11.155.
- D. K. Sarkar, D. Brassard, M. A. El Khakani, and L. Ouellet, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2006.11.155 515, 4788 (2007).
- (2007) Thin Solid Films , vol.515 , pp. 4788
- Sarkar, D.K.¹ Brassard, D.² El Khakani, M.A.³ Ouellet, L.⁴

33
- 33644521771
- JVTAD6 0734-2101 10.1116/1.2172951.
- T. Busani, R. A. B. Devine, X. Yu, and H. W. Seo, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.2172951 24, 369 (2006).
- (2006) J. Vac. Sci. Technol. A , vol.24 , pp. 369
- Busani, T.¹ Devine, R.A.B.² Yu, X.³ Seo, H.W.⁴

34
- 34547919250
- JAPNDE 0021-4922.
- S. Lee and K. Yong, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 46, 5259 (2007).
- (2007) Jpn. J. Appl. Phys., Part 1 , vol.46 , pp. 5259
- Lee, S.¹ Yong, K.²

35
- 2942581196
- JAPIAU 0021-8979 10.1063/1.1702101.
- A. Paskaleva, A. J. Bauer, M. Lemberger, and S. Zurcher, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1702101 95, 5583 (2004).
- (2004) J. Appl. Phys. , vol.95 , pp. 5583
- Paskaleva, A.¹ Bauer, A.J.² Lemberger, M.³ Zurcher, S.⁴

36
- 0034825188
- MIENEF 0167-9317 10.1016/S0167-9317(00)00446-9.
- P. H. Giauque, H. B. Cherry, and M. A. Nicolet, Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(00)00446-9 55, 183 (2001).
- (2001) Microelectron. Eng. , vol.55 , pp. 183
- Giauque, P.H.¹ Cherry, H.B.² Nicolet, M.A.³

37
- 4944231351
- APPLAB 0003-6951 10.1063/1.1784889.
- J. Price, P. Y. Hung, T. Rhoad, B. Foran, and A. C. Diebold, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1784889 85, 1701 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1701
- Price, J.¹ Hung, P.Y.² Rhoad, T.³ Foran, B.⁴ Diebold, A.C.⁵

38
- 33646537828
- SIANDQ 0142-2421 10.1002/sia.2273.
- F. Gracia, F. Yubero, J. P. Espinos, J. P. Holgado, A. R. GonzalezElipe, and T. Girardeau, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.2273 38, 752 (2006).
- (2006) Surf. Interface Anal. , vol.38 , pp. 752
- Gracia, F.¹ Yubero, F.² Espinos, J.P.³ Holgado, J.P.⁴ Gonzalezelipe, A.R.⁵ Girardeau, T.⁶

39
- 0001324296
- CATTEA 0920-5861 10.1016/S0920-5861(99)00048-6.
- X. T. Gao and I. E. Wachs, Catal. Today CATTEA 0920-5861 10.1016/S0920-5861(99)00048-6 51, 233 (1999).
- (1999) Catal. Today , vol.51 , pp. 233
- Gao, X.T.¹ Wachs, I.E.²

40
- 0032139344
- SUSCAS 0039-6028 10.1016/S0039-6028(98)00389-6.
- M. B. Raschke, P. Bratu, and U. Hofer, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(98)00389-6 410, 351 (1998).
- (1998) Surf. Sci. , vol.410 , pp. 351
- Raschke, M.B.¹ Bratu, P.² Hofer, U.³

41
- 19444377436
- PYLAAG 0375-9601 10.1016/j.physleta.2005.04.008.
- K. R. Zhu, M. S. Zhang, Q. Chen, and Z. Yin, Phys. Lett. A PYLAAG 0375-9601 10.1016/j.physleta.2005.04.008 340, 220 (2005).
- (2005) Phys. Lett. A , vol.340 , pp. 220
- Zhu, K.R.¹ Zhang, M.S.² Chen, Q.³ Yin, Z.⁴

42
- 0033729032
- MSBTEK 0921-5107 10.1016/S0921-5107(00)00442-6.
- A. M. Seco, M. C. Goncalves, and R. M. Almeida, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/S0921-5107(00)00442-6 76, 193 (2000).
- (2000) Mater. Sci. Eng., B , vol.76 , pp. 193
- Seco, A.M.¹ Goncalves, M.C.² Almeida, R.M.³

43
- 0001689833
- PRBMDO 0163-1829 10.1103/PhysRevB.50.4881.
- I. Montero, L. Galan, O. Najmi, and J. M. Albella, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.50.4881 50, 4881 (1994).
- (1994) Phys. Rev. B , vol.50 , pp. 4881
- Montero, I.¹ Galan, L.² Najmi, O.³ Albella, J.M.⁴

44
- 0037103475
- JAPIAU 0021-8979 10.1063/1.1494843.
- B. Gallas, A. Brunet-Bruneau, S. Fisson, G. Vuye, and J. Rivory, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1494843 92, 1922 (2002).
- (2002) J. Appl. Phys. , vol.92 , pp. 1922
- Gallas, B.¹ Brunet-Bruneau, A.² Fisson, S.³ Vuye, G.⁴ Rivory, J.⁵

45
- 36449001268
- JAPIAU 0021-8979 10.1063/1.348591.
- N. S. Gluck, H. Sankur, J. Heuer, J. Denatale, and W. J. Gunning, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.348591 69, 3037 (1991).
- (1991) J. Appl. Phys. , vol.69 , pp. 3037
- Gluck, N.S.¹ Sankur, H.² Heuer, J.³ Denatale, J.⁴ Gunning, W.J.⁵

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