Modified space-charge limited conduction in tantalum pentoxide MIM capacitors

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2310-2313

  Martinez, V ^a,b   Besset, C ^a   Monsieur, F ^a   Montes L ^b   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

Conduction mechanism; High K; MIM capacitors; SCLC; Tantalum pentoxide

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; MIM DEVICES; OXYGEN VACANCIES; TANTALUM COMPOUNDS;

CONDUCTION MECHANISMS; MIM CAPACITORS; TANTALUM PENTOXIDES;

ELECTRIC SPACE CHARGE;

EID: 34248662430     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.023     Document Type: Article

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