Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 8, 2005, Pages 1781-1787

  Wang, J ^a   Zhao, L ^a   H luu, N ^a   Wang, D ^a   Nakashima, H ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORMS; PERMITTIVITY; PLASMAS; POLYCRYSTALLINE MATERIALS; SPUTTERING; ZIRCONIA;

DIELECTRIC BREAKDOWN; GATE DIELECTRICS; PLASMA SPUTTERING; POLYCRYSTALLINE FILMS;

DIELECTRIC FILMS;

EID: 17444428140     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2483-z     Document Type: Article

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