High-k titanium silicate thin films grown by reactive magnetron sputtering for complementary metal-oxide-semiconductor applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 851-855

  Brassard, D ^a   Sarkar, D K ^a   El Khakani, M A ^a   Quellet, L ^b  

^a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

^b DALSA Semiconductor Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DIELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXYGEN; PERMITTIVITY; REFRACTIVE INDEX; SILICA; SILICATES; SPUTTER DEPOSITION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING STATES; RADIO-FREQUENCY MAGNETRON SPUTTERING; REACTIVE MAGNETRON SPUTTERING; TITANIUM SILICATE;

TITANIUM COMPOUNDS;

EID: 3142599639     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1722530     Document Type: Conference Paper

References (31)

1. The International Technology Roadmap for Semiconductors, 2002 Update, Semiconductor Industry Association, Austin, TX, International SEMATECH, 2001/2002.
2. M. Kadoshima, M. Hiratani, Y. Shimamoto, K. Torii, H. Miki, S. Kimura, and T. Nabatame, Thin Solid Films 424, 224 (2003).
3. S. Ramanathan, C. M. Park, and P. C. McIntyre, J. Appl. Phys. 91, 4521 (2002).
4. A. Callegari, E. Cartier, M. Gribelyuk, H. F. Okorn-Schmidt, and T. Zabel, J. Appl. Phys. 90, 6466 (2001).
5. G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. Urdahl, Appl. Phys. Lett. 73, 1517 (1998).
6. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
7. G. Lucovsky and G. B. Rayner, Jr., Appl. Phys. Lett. 77, 2912 (2000).
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
9. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 76, 112 (2000).
10. J. J. Chambers and G. N. Parsons, J. Appl. Phys. 90, 918 (2001).
11. D. K. Sarkar, E. Desbiens, and M. A. El Khakani, Appl. Phys. Lett. 80, 294 (2002).
12. A. Nishiyama, A. Kaneko, M. Koyama, Y. Kamata, I. Fujiwara, M. Koike, M. Yoshiki, and M. Koike, Mater. Res. Soc. Symp. Proc. 670, K4.8.1 (2001).
13. R. C. Smith, N. Hoilien, C. D. Stehpen, A. Campbell, J. T. Roberts, and W. L. Gladfelter, Chem. Vap. Deposition 9, 79 (2003).
14. T. Kamada, M. Kitagawa, M. Shibuya, and T. Hirao, Jpn. J. Appl. Phys., Part 1 30, 3594 (1991).
15. R. P. Netterfield, P. J. Martin, C. G. Pacey, and W. G. Sainty, J. Appl. Phys. 66, 1805 (1989).
16. M. Koyama, A. Kaneko, M. Koike, I. Fujiwara, M. Yabuki, M. Yoshiki, M. Koike, and A. Nishiyama, Mater. Res. Soc. Symp. Proc. 670, K4.7.1 (2001).
17. X. Wang, H. Masumoto, Y. Someno, and T. Hirai, Thin Solid Films 338, 105 (1999).
18. M. F. Ouellette, R. V. Lang, K. L. Yan, R. W. Bertram, and R. S. Owles, J. Vac. Sci. Technol. A 9, 1188 (1991).
19. Y. Sorek, R. Reisfeld, I. Finkelstein, and S. Ruschin, Appl. Phys. Lett. 63, 3256 (1993).
20. X. Orignac, D. Barbier, X. M. Du, and R. M. Almeida, Appl. Phys. Lett. 69, 895 (1996).
21. A. M. Seco, M. C. Gonçlves, and R. M. Almeida, Mater. Sci. Eng., B 76, 193 (2000).
22. H. Tomaszewski et al., Vacuum 68, 31 (2003).
23. S. B. Amor, B. Regier, G. Baud, M. Jacquet, and M. Nardin, Mater. Sci. Eng., B 57, 28 (1998).
24. D.-C. Shye, B.-S. Chiou, M.-J. Lai, C.-C. Hwang, C.-C. Jiang, J.-S. Chen, M.-H. Cheng, and H.-C. Cheng, J. Electrochem. Soc. 150, F20 (2003).
25. B. Gallas, A. Brunet-Bruneau, S. Fisson, G. Vuye, and J. Rivory, J. Appl. Phys. 92, 1922 (2002).
26. 2.
27. T. L. Barr, J. Vac. Sci. Teehnol. A 9, 1793 (1991).
28. T. Nakayama, J. Electrochem. Soc. 141, 237 (1994).
29. I. Montera, L. Galàn, O. Najmi, and J. M. Albella, Phys. Rev. B 50, 4884 (1994).
30. P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovski, J. Vac. Sci. Technol. A 4, 689 (1986).
31. S.-J. Lee, K.-Y. Kang, and S.-K. Han, Appl. Phys. Lett. 75, 1784 (1999).