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Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

High-temperature conduction behaviors of HfO2 /TaN -based metal-insulator-metal capacitors

(7) Pan, Shaohui a Ding, Shi Jin a Huang, Yue a Huang, Yu Jian a Zhang, David Wei a Wang, Li Kang a Liu, Ran a

a FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITORS; ELECTRIC FIELDS; LEAKAGE CURRENTS; PERMITTIVITY; REFRACTIVE INDEX; THERMAL CONDUCTIVITY;

HIGH DENSITY TRAPS; POOLE-FRENKEL (PF) EMISSION; SCHOTTKY BARRIER HEIGHT; SCHOTTKY EMISSION;

MIM DEVICES;

EID: 35348925971 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2786712 Document Type: Article

Times cited : (34)

References (25)

1
- 4544224739
- VLSI Technology Digest of Technical Papers
- Y. K. Jeong, S. J. Won, D. J. Kwon, M. W. Song, W. H. Kim, M. H. Park, J. H. Jeong, H. S. Oh, H. K. Kang, and K. P. Suh, in Symposium, VLSI Technology Digest of Technical Papers, p. 222 (2004).
- (2004) , pp. 222
- Jeong, Y.K.¹ Won, S.J.² Kwon, D.J.³ Song, M.W.⁴ Kim, W.H.⁵ Park, M.H.⁶ Jeong, J.H.⁷ Oh, H.S.⁸ Kang, H.K.⁹ Suh, K.P.¹⁰

2
- 27144453436
- VLSI Technology Digest of Technical Papers
- K. C. Chiang, A. Chin, C. H. Lai, W. J. Chen, C. F. Cheng, B. F. Hung, and C. C. Liao, in Symposium, VLSI Technology Digest of Technical Papers, p. 62 (2005).
- (2005) , pp. 62
- Chiang, K.C.¹ Chin, A.² Lai, C.H.³ Chen, W.J.⁴ Cheng, C.F.⁵ Hung, B.F.⁶ Liao, C.C.⁷

3
- 33847737364
- D. Roberts, W. Johnstone, H. Sanchez, O. Mandhana, D. Spilo, J. Hayden, E. Travis, B. Melnick, M. Celik, B. W. Min, J. Edgerton, M. Raymond, E. Luckowski, C. Happ, A. Martinez, B. Wilson, P. Leung, T. Garnett, D. Goedeke, T. Remmel, K. Ramakrishna, and B. E. White, Jr., IEDM Technical Digest, p. 72 (2005).
- (2005) IEDM Technical Digest , pp. 72
- Roberts, D.¹ Johnstone, W.² Sanchez, H.³ Mandhana, O.⁴ Spilo, D.⁵ Hayden, J.⁶ Travis, E.⁷ Melnick, B.⁸ Celik, M.⁹ Min, B.W.¹⁰ Edgerton, J.¹¹ Raymond, M.¹² Luckowski, E.¹³ Happ, C.¹⁴ Martinez, A.¹⁵ Wilson, B.¹⁶ Leung, P.¹⁷ Garnett, T.¹⁸ Goedeke, D.¹⁹ Remmel, T.²⁰ more..

4
- 33845263012
- 1071-1023 10.1116/1.2357746
- S. -J. Ding, Y. -J. Huang, Y. Li, D. W. Zhang, C. Zhu, and M. -F. Li, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2357746 24, 2518 (2006).
- (2006) J. Vac. Sci. Technol. B , vol.24 , pp. 2518
- Ding, S.-J.¹ Huang, Y.-J.² Li, Y.³ Zhang, D.W.⁴ Zhu, C.⁵ Li, M-F.⁶

5
- 0037718406
- 0741-3106 10.1109/LED.2002.808159
- X. F. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, and M. B. Yu, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.808159 24, 63 (2003).
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 63
- Yu, X.F.¹ Zhu, C.² Hu, H.³ Chin, A.⁴ Li, M.F.⁵ Cho, B.J.⁶ Kwong, D.L.⁷ Foo, P.D.⁸ Yu, M.B.⁹

6
- 33749162355
- 0169-4332
- N. K. Park, D. K. Kang, B. H. Kim, S. J. Jo, and J. S. Ha, Appl. Surf. Sci. 252, 8506 (2006). 0169-4332
- (2006) Appl. Surf. Sci. , vol.252 , pp. 8506
- Park, N.K.¹ Kang, D.K.² Kim, B.H.³ Jo, S.J.⁴ Ha, J.S.⁵

7
- 0037959796
- 0003-6951 10.1063/1.1569985
- S. Y. Lee, H. Kim, P. C. McIntyre, K. C. Saraswat, and J. S. Byun, Appl. Phys. Lett. 0003-6951 10.1063/1.1569985 82, 2874 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2874
- Lee, S.Y.¹ Kim, H.² McIntyre, P.C.³ Saraswat, K.C.⁴ Byun, J.S.⁵

8
- 33746634398
- 0018-9383 10.1109/TED.2006.877870
- C. Wenger, G. Lippert, R. Sorge, T. Schroeder, A. U. Mane, G. Lupina, J. Dabrowski, P. Zaumsei, X. Fan, L. Oberbeck, U. Schroeder, and H. J. Müssig, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.877870 53, 1937 (2006).
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 1937
- Wenger, C.¹ Lippert, G.² Sorge, R.³ Schroeder, T.⁴ Mane, A.U.⁵ Lupina, G.⁶ Dabrowski, J.⁷ Zaumsei, P.⁸ Fan, X.⁹ Oberbeck, L.¹⁰ Schroeder, U.¹¹ Müssig, H.J.¹²

9
- 0000214962
- 0040-6090 10.1016/0040-6090(77)90312-1
- M. Balog and M. Schieber, Thin Solid Films 0040-6090 10.1016/0040- 6090(77)90312-1 41, 247 (1977).
- (1977) Thin Solid Films , vol.41 , pp. 247
- Balog, M.¹ Schieber, M.²

10
- 35348853486
- 0003-6951
- S. -J. Ding, C. Zhu, M. -F. Li, and D. W. Zhang, Appl. Phys. Lett. 87, 053051 (2005). 0003-6951
- (2005) Appl. Phys. Lett. , vol.87 , pp. 053051
- Ding, S.-J.¹ Zhu, C.² Li, M-F.³ Zhang, D.W.⁴

11
- 5044249481
- 0741-3106 10.1109/LED.2004.835791
- S. -J. Ding, H. Hu, C. Zhu, M. F. Li, S. J. Kim, B. J. Cho, D. S. H. Chan, M. B. Yu, A. Y. Du, A. Chin, and D. -L. Kwong, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004.835791 25, 681 (2004).
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 681
- Ding, S.-J.¹ Hu, H.² Zhu, C.³ Li, M.F.⁴ Kim, S.J.⁵ Cho, B.J.⁶ Chan, D.S.H.⁷ Yu, M.B.⁸ Du, A.Y.⁹ Chin, A.¹⁰ Kwong, D.-L.¹¹

12
- 17044426365
- 0003-6951 10.1063/1.1865326
- D. S. Jeong, H. B. Park, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.1865326 86, 072903 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 072903
- Jeong, D.S.¹ Park, H.B.² Hwang, C.S.³

13
- 0036477562
- 0741-3106 10.1109/55.981318
- W. J. Zhu, T. -P. Ma, T. Tamagawa, J. Kim, and Y. Di, IEEE Electron Device Lett. 0741-3106 10.1109/55.981318 23, 97 (2002).
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 97
- Zhu, W.J.¹ Ma, T.-P.² Tamagawa, T.³ Kim, J.⁴ Di, Y.⁵

14
- 1842426436
- 0021-8979 10.1063/1.1646441
- T. P. Juan, S. -M. Chen, and J. Y. M. Lee, J. Appl. Phys. 0021-8979 10.1063/1.1646441 95, 3120 (2004).
- (2004) J. Appl. Phys. , vol.95 , pp. 3120
- Juan, T.P.¹ Chen, S.-M.² Lee, J.Y.M.³

15
- 0000676784
- 0021-8979 10.1063/1.370756
- C. Chaneliere, J. L. Autran, and R. A. B. Devine, J. Appl. Phys. 0021-8979 10.1063/1.370756 86, 480 (1999).
- (1999) J. Appl. Phys. , vol.86 , pp. 480
- Chaneliere, C.¹ Autran, J.L.² Devine, R.A.B.³

16
- 0036697478
- 0021-4922
- H. Yanagisawa, M. Kamijyo, S. Shinkai, K. Sasaki, Y. Abe, and M. Yamane, Jpn. J. Appl. Phys. 41, 5284 (2002). 0021-4922
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 5284
- Yanagisawa, H.¹ Kamijyo, M.² Shinkai, S.³ Sasaki, K.⁴ Abe, Y.⁵ Yamane, M.⁶

17
- 33645505949
- 0003-6951 10.1063/1.2006977
- H. N. Alshareef, H. C. Wen, H. R. Harris, K. Choi, H. F. Luan, P. Lysaght, P. Majhi, B. H. Lee, M. El-Bouanani, and V. Ukride, Appl. Phys. Lett. 0003-6951 10.1063/1.2006977 87, 052109 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 052109
- Alshareef, H.N.¹ Wen, H.C.² Harris, H.R.³ Choi, K.⁴ Luan, H.F.⁵ Lysaght, P.⁶ Majhi, P.⁷ Lee, B.H.⁸ El-Bouanani, M.⁹ Ukride, V.¹⁰

18
- 33746322324
- 0003-6951 10.1063/1.2234288
- K. Choi, H. N. Alshareef, H. C. Wen, H. R. Harris, H. F. Luan, Y. Senzaki, P. Lysaght, P. Majhi, and B. H. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2234288 89, 032113 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 032113
- Choi, K.¹ Alshareef, H.N.² Wen, H.C.³ Harris, H.R.⁴ Luan, H.F.⁵ Senzaki, Y.⁶ Lysaght, P.⁷ Majhi, P.⁸ Lee, B.H.⁹

19
- 0035424175
- 0021-8979 10.1063/1.1381043
- S. Blonkowski, M. Regache, and A. Halimaoui, J. Appl. Phys. 0021-8979 10.1063/1.1381043 90, 1501 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 1501
- Blonkowski, S.¹ Regache, M.² Halimaoui, A.³

20
- 29144521437
- 0021-8979 10.1063/1.2135895
- D. S. Jeong and C. S. Hwang, J. Appl. Phys. 0021-8979 10.1063/1.2135895 98, 113701 (2005).
- (2005) J. Appl. Phys. , vol.98 , pp. 113701
- Jeong, D.S.¹ Hwang, C.S.²

21
- 0031189738
- 0021-8979 10.1063/1.365820
- G. Palasantzas, J. Appl. Phys. 0021-8979 10.1063/1.365820 82, 351 (1997).
- (1997) J. Appl. Phys. , vol.82 , pp. 351
- Palasantzas, G.¹

22
- 0009765620
- 0897-4756 10.1021/cm980760x
- M. Ritala, P. Kalsi, D. Riihela, K. Kukli, M. Leskela, and J. Jokinen, Chem. Mater. 0897-4756 10.1021/cm980760x 11, 1712 (1999).
- (1999) Chem. Mater. , vol.11 , pp. 1712
- Ritala, M.¹ Kalsi, P.² Riihela, D.³ Kukli, K.⁴ Leskela, M.⁵ Jokinen, J.⁶

23
- 0001219005
- 0163-1829 10.1103/PhysRevB.43.14261
- P. Li and T. -M. Lu, Phys. Rev. B 0163-1829 10.1103/PhysRevB.43.14261 43, 14261 (1991).
- (1991) Phys. Rev. B , vol.43 , pp. 14261
- Li, P.¹ Lu, T.-M.²

24
- 0036697478
- 0021-4922
- H. Yanagisawa, M. Kamijyo, S. Shinkai, K. Sasaki, Y. Abe, and M. Yamane, Jpn. J. Appl. Phys. 41, 5284 (2002). 0021-4922
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 5284
- Yanagisawa, H.¹ Kamijyo, M.² Shinkai, S.³ Sasaki, K.⁴ Abe, Y.⁵ Yamane, M.⁶

25
- 0032073164
- 0021-8979 10.1063/1.367272
- S. Ezhilvalavan and T. -Y. Tseng, J. Appl. Phys. 0021-8979 10.1063/1.367272 83, 4797 (1998).
- (1998) J. Appl. Phys. , vol.83 , pp. 4797
- Ezhilvalavan, S.¹ Tseng, T.-Y.²

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