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Volumn 102, Issue 3, 2007, Pages

Substrate biasing effect on the electrical properties of magnetron-sputtered high-k titanium silicate thin films

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; MAGNETRON SPUTTERING; PERMITTIVITY; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34548012649     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759196     Document Type: Article
Times cited : (17)

References (42)
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  • 37
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    • RBS measurements directly yield the film thickness in atoms cm2. This thickness can also be independently determined by taking into account the films composition, their physical thickness (in nm) and the density (in g cm3) provided by XRR analysis. (It is to be recalled here that these thicknesses correspond to the films deposited with the same deposition time of 90 min.)
    • RBS measurements directly yield the film thickness in atoms cm2. This thickness can also be independently determined by taking into account the films composition, their physical thickness (in nm) and the density (in g cm3) provided by XRR analysis. (It is to be recalled here that these thicknesses correspond to the films deposited with the same deposition time of 90 min.)
  • 38
    • 34548015832 scopus 로고    scopus 로고
    • The amount of material sputtered from the target during the deposition of the titanium silicate films is independent of the bias voltage applied on the substrate (as confirmed by using an unbiased microbalance). Thus, the observed variation of the thickness shown in Fig. is not caused by a change in the flux of the incoming sputtered species, but rather indicates some material loss (through resputtering) from the growing films submitted to high bias voltages.
    • The amount of material sputtered from the target during the deposition of the titanium silicate films is independent of the bias voltage applied on the substrate (as confirmed by using an unbiased microbalance). Thus, the observed variation of the thickness shown in Fig. is not caused by a change in the flux of the incoming sputtered species, but rather indicates some material loss (through resputtering) from the growing films submitted to high bias voltages.


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