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RBS measurements directly yield the film thickness in atoms cm2. This thickness can also be independently determined by taking into account the films composition, their physical thickness (in nm) and the density (in g cm3) provided by XRR analysis. (It is to be recalled here that these thicknesses correspond to the films deposited with the same deposition time of 90 min.)
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RBS measurements directly yield the film thickness in atoms cm2. This thickness can also be independently determined by taking into account the films composition, their physical thickness (in nm) and the density (in g cm3) provided by XRR analysis. (It is to be recalled here that these thicknesses correspond to the films deposited with the same deposition time of 90 min.)
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The amount of material sputtered from the target during the deposition of the titanium silicate films is independent of the bias voltage applied on the substrate (as confirmed by using an unbiased microbalance). Thus, the observed variation of the thickness shown in Fig. is not caused by a change in the flux of the incoming sputtered species, but rather indicates some material loss (through resputtering) from the growing films submitted to high bias voltages.
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