-
3
-
-
3142622979
-
-
C. Durand, C. Dubourdieu, C. Valĺe, V. Loup, M. Bonvalot, O. Joubert, and H. Roussel, J. Vac. Sci. Technol. A 22, 655 (2004).
-
(2004)
J. Vac. Sci. Technol. A
, vol.22
, pp. 655
-
-
Durand, C.1
Dubourdieu, C.2
Valĺe, C.3
Loup, V.4
Bonvalot, M.5
Joubert, O.6
Roussel, H.7
-
4
-
-
0043093732
-
-
S. J. Kim, B. J. Cho, M. F. Li, X. Yu, C. Zhu, A. Chin, and D. -L. Kwong, IEEE Electron Device Lett. 24, 387 (2003).
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 387
-
-
Kim, S.J.1
Cho, B.J.2
Li, M.F.3
Yu, X.4
Zhu, C.5
Chin, A.6
Kwong, D.-L.7
-
5
-
-
0344193517
-
-
M. Kadoshima, M. Hiratani, Y. Shimamoto, K. Torii, H. Miki, S. Kimura, and T. Nabatame, Thin Solid Films 424, 224 (2003).
-
(2003)
Thin Solid Films
, vol.424
, pp. 224
-
-
Kadoshima, M.1
Hiratani, M.2
Shimamoto, Y.3
Torii, K.4
Miki, H.5
Kimura, S.6
Nabatame, T.7
-
6
-
-
0037959796
-
-
S.-Y. Lee, H. Kim, P. C. McIntyre, K. C. Saraswat, and J.-S. Byun, Appl. Phys. Lett. 82, 2874 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 2874
-
-
Lee, S.-Y.1
Kim, H.2
McIntyre, P.C.3
Saraswat, K.C.4
Byun, J.-S.5
-
8
-
-
3142599639
-
-
D. Brassard, D. K. Sarkar, L. Ouellet, and M. A. El Khakani, J. Vac. Sci. Technol. A 22, 851 (2004).
-
(2004)
J. Vac. Sci. Technol. A
, vol.22
, pp. 851
-
-
Brassard, D.1
Sarkar, D.K.2
Ouellet, L.3
El Khakani, M.A.4
-
10
-
-
2942581196
-
-
A. Paskaleva, A. J. Bauer, M. Lemberger, and S. Zürcher, J. Appl. Phys. 95, 5583 (2004).
-
(2004)
J. Appl. Phys.
, vol.95
, pp. 5583
-
-
Paskaleva, A.1
Bauer, A.J.2
Lemberger, M.3
Zürcher, S.4
-
11
-
-
33646541303
-
-
MRS Symposia Proceedings No. edited by S. A.Campbel, C. C.Hobbs, L.Clevenger, and P.Griffin (Materials Research Society, Pittsburgh
-
A. Nishiyama, A. Kaneko, M. Koyama, I. Fujiwara, M. Koike, M. Yoshiki, and M. Koike, in Gate Stack and Silicide Issues in Silicon Processing II, MRS Symposia Proceedings No. 670, edited by, S. A. Campbel, C. C. Hobbs, L. Clevenger, and, P. Griffin, (Materials Research Society, Pittsburgh, 2001) Paper No. K4.8.1.
-
(2001)
Gate Stack and Silicide Issues in Silicon Processing II
, Issue.670
-
-
Nishiyama, A.1
Kaneko, A.2
Koyama, M.3
Fujiwara, I.4
Koike, M.5
Yoshiki, M.6
Koike, M.7
-
14
-
-
4944231351
-
-
J. Price, P. Y. Hung, T. Rhoad, B. Foran, and A. C. Diebold, Appl. Phys. Lett. 85, 1701 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 1701
-
-
Price, J.1
Hung, P.Y.2
Rhoad, T.3
Foran, B.4
Diebold, A.C.5
-
17
-
-
0036732205
-
-
A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, J. Appl. Phys. 92, 2424 (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 2424
-
-
Ferlauto, A.S.1
Ferreira, G.M.2
Pearce, J.M.3
Wronski, C.R.4
Collins, R.W.5
Deng, X.6
Ganguly, G.7
-
19
-
-
0037103475
-
-
B. Gallas, A. Brunet-Bruneau, S. Fisson, G. Vuye, and J. Rivory, J. Appl. Phys. 92, 1922 (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 1922
-
-
Gallas, B.1
Brunet-Bruneau, A.2
Fisson, S.3
Vuye, G.4
Rivory, J.5
-
22
-
-
4344702212
-
-
S. Larouche, H. Szymanowski, J. E. Klember-Sapieha, L. Martinu, and S. C. Gujrathi, J. Vac. Sci. Technol. A 22, 1200 (2004).
-
(2004)
J. Vac. Sci. Technol. A
, vol.22
, pp. 1200
-
-
Larouche, S.1
Szymanowski, H.2
Klember-Sapieha, J.E.3
Martinu, L.4
Gujrathi, S.C.5
-
24
-
-
0012407741
-
-
G. Ceriola, F. Iacona, F. La Via, V. Raineri, E. Bontempi, and L. E. Depero, J. Electrochem. Soc. 148, F221 (2001).
-
(2001)
J. Electrochem. Soc.
, vol.148
, pp. 221
-
-
Ceriola, G.1
Iacona, F.2
La Via, F.3
Raineri, V.4
Bontempi, E.5
Depero, L.E.6
-
25
-
-
0032715784
-
-
X. Wang, H. Masumoto, Y. Someno, and T. Hirai, Thin Solid Films 338, 105 (1999).
-
(1999)
Thin Solid Films
, vol.338
, pp. 105
-
-
Wang, X.1
Masumoto, H.2
Someno, Y.3
Hirai, T.4
-
27
-
-
13844276122
-
-
G.-M. Rignanese, X. Rocquefelte, X. Gonze, and A. Pasquarello, Int. J. Quantum Chem. 101, 793 (2005).
-
(2005)
Int. J. Quantum Chem.
, vol.101
, pp. 793
-
-
Rignanese, G.-M.1
Rocquefelte, X.2
Gonze, X.3
Pasquarello, A.4
-
28
-
-
0036540911
-
-
S. van Huylenbroeck, S. Decoutere, R. Venegas, S. Jenei, and G. Winderickx, IEEE Electron Device Lett. 23, 191 (2002).
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 191
-
-
Van Huylenbroeck, S.1
Decoutere, S.2
Venegas, R.3
Jenei, S.4
Winderickx, G.5
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