Growth and characterization of MOMBE grown HfO 2

Applied Surface Science

Volumn 240, Issue 1-4, 2005, Pages 105-111

  Moon, Tae Hyoung ^a   Ham, Moon Ho ^a   Kim, Myoung Seok ^a   Yun, Ilgu ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

Author keywords

Hfo 2; High k dielectric materials; Metalorganic molecular beam epitaxy

Indexed keywords

BINDING ENERGY; CAPACITANCE; CRYSTAL GROWTH; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; DECOMPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; OXYGEN; SILICA; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HFO2; HIGH-K DIELECTRIC MATERIALS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

HAFNIUM COMPOUNDS;

EID: 10444274952     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.017     Document Type: Article

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