Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature

Thin Solid Films

Volumn 479, Issue 1-2, 2005, Pages 1-11

  Kukli, Kaupo ^a,b   Aarik, Jaan ^a   Uustare, Teet ^a   Lu, Jun ^c   Ritala, Mikko ^b   Aidla, Aleks ^a   Pung, Lembit ^a   Hårsta, Anders ^c   Leskelä, Markku ^b   Kikas, Arvo ^a   Sammelselg, Väino ^a  

^a UNIVERSITY OF TARTU   (Estonia)

^b UNIVERSITY OF HELSINKI   (Finland)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

Atomic layer deposition; Dielectrics; Hafnium dioxide

Indexed keywords

CAPACITANCE; CRYSTALLIZATION; DIELECTRIC FILMS; ELECTRODES; GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SILICON;

ATOMIC LAYER DEPOSITION; DIELECTRIC THIN FILMS; DISORDERED SOLIDS; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES;

THIN FILMS;

EID: 20144383101     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.191     Document Type: Article

References (57)

1. H.R. Huff, A. Hou, C. Lim, Y. Kim, J. Barnett, G. Bersuker, G.A. Brown, C.D. Young, P.M. Zeitzoff, J. Gutt, P. Lysaght, M.I. Gardner, and R.W. Murto Microelectron. Eng. 69 2003 152
2. Y.-H. Kim, and J.C. Lee Microelectron. Reliab. 44 2004 183
3. J.C. Lee, and K. Onishi M. Houssa High-k Transistor characteristics, in High-k gate dielectrics, series in materials science and engineering 2004 IOP Publishing Bristol 560
4. J.C. Wang, D.C. Shie, T.F. Lei, and C.L. Lee Electrochem. Solid-State Lett. 6 2003 F34
5. F. Lime, K. Oshima, M. Cassé, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, and H. Iwai Solid-State Electron. 47 2003 1617
6. E.P. Gusev, and C.P. D'Emic Appl. Phys. Lett. 83 2003 5223
7. C.C. Yeo, B.J. Cho, M.S. Joo, S.J. Whoang, D.L. Kwong, L.K. Bera, S. Mathew, and N. Balasubramanian Electrochem. Solid-State Lett. 6 2003 F42
8. T. Kawahara, and K. Torii IEICE Trans. Electron. E87-C 2004 2
9. S. Nam, S.-W. Nam, J.-H. Yoo, and D.-H. Ko Mater. Sci. Eng. B 102 2003 123
10. C. Wiemer, S. Ferrari, M. Fanciulli, G. Pavia, and L. Lutterotti Thin Solid Films 450 2004 134
11. T. Yamamoto, Y. Izumi, N. Sugiyama, K. Yoshikawa, H. Hashimoto, and Y. Sugita IEICE Trans. Electron. E87-C 2004 17
12. Y. Morisaki, Y. Sugita, K. Irino, and T. Aoyama Ext. Abstracts Int. Workshop Gate Ins. 2001 (IWGI 2001), Nov. 1-2, 2001, Tokyo, Japan 2001 184
13. C.K. Maiti, S. Maikap, S. Chatterjee, S.K. Nandi, and S.K. Samanta Solid-State Electron. 47 2003 1995
14. M. Fanciulli, S. Spiga, G. Scarel, G. Tallarida, C. Wiemer, and G. Sergini Mater. Res. Soc. Symp. Proc. 786 2003 E6.14
15. K. Kukli, J. Aarik, M. Ritala, T. Uustare, T. Sajavaara, J. Lu, J. Sundqvist, A. Aidla, L. Pung, A. Hårsta, and M. Leskelä J. Appl. Phys. 96 2004 5298
16. K. Kukli, M. Ritala, M. Leskelä, T. Sajavaara, J. Keinonen, D.C. Gilmer, R. Hegde, R. Rai, and L. Prabhu J. Mater. Sci.: Mater. Electron. 14 2003 361
17. J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg Thin Solid Films 340 1999 110
18. J. Lu, J. Aarik, J. Sundqvist, K. Kukli, A. Hårsta, J.-O. Carlsson, J. Cryst. Growth, in press (available online 22 Oct. 2004).
19. S. Garcia, I. Mártil, G. Gonzalez Diaz, E. Castan, S. Dueñas, and M. Fernandes J. Appl. Phys. 83 1998 600
20. D.K. Schröder Semiconductor material and device characterization 2nd ed. 1998 J. Wiley and Sons New York 350
21. T. Hori Gate dielectrics and MOS ULSIs; principles, technologies and applications 1997 Springer Berlin 40
22. J. Robertson, and P.W. Peacock Thin Solid Films 445 2003 155
23. J. Aarik, A. Aidla, H. Mändar, V. Sammelselg, and T. Uustare J. Cryst. Growth 220 2000 105
24. V. Sammelselg, J. Karlis, A. Kikas, J. Aarik, H. Mändar, and T. Uustare M. Kotrla N.I. Papanicolaou D.D. Vvedensky L.T. Wille Atomistic aspects of epitaxial growth NATO Science Series II vol. 65 2002 Kluwer Dordrecht 583
25. K. Choi, H. Harris, S. Gangopadhyay, and H. Temkin J. Vac. Sci. Technol. A 21 2003 718
26. J. Aarik, A. Aidla, A. Kikas, T. Käämbre, R. Rammula, P. Ritslaid, T. Uustare, and V. Sammelselg Appl. Surf. Sci. 230 2004 292
27. J. Aarik, A. Aidla, H. Mändar, T. Uustare, K. Kukli, and M. Schuisky Appl. Surf. Sci. 173 2001 15
28. M.L. Green, M.-Y. Ho, B. Busch, G.D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P.I. Räisänen, D. Muller, M. Bude, and J. Grazul J. Appl. Phys. 92 2002 7168
29. W.F.A. Besling, E. Young, T. Conard, C. Zhao, R. Carter, W. Vandervorst, M. Caymax, S. De Gendt, M. Heyns, J. Maes, M. Tuominen, and S. Haukka J. Non-Cryst. Solids 303 2002 123
30. T. Suntola Appl. Surf. Sci. 100-101 1996 391
31. M. Deminsky, A. Knizhnik, I. Belov, S. Umanskii, E. Rykova, A. Bagatur'yants, B. Potapkin, M. Stoker, and A. Korkin Surf. Sci. 549 2004 67
32. E.P. Gusev, C. Cabral Jr., M. Copel, C. D'Emic, and M. Gribelyuk Microelectron. Eng. 69 2003 145
33. M.A. Alam, and M.L. Green J. Appl. Phys. 94 2003 3403
34. R.I. Puurunen J. Appl. Phys. 95 2004 4777
35. R. Matero, A. Rahtu, M. Ritala, M. Leskelä, and T. Sajavaara Thin Solid Films 368 2000 1
36. M. Cho, J. Park, H.B. Park, C.S. Hwang, J. Jeong, and K.S. Hyun Appl. Phys. Lett. 81 2002 334
37. L.R.C. Fonseca, A. Korkin, A.A. Demkov, X. Zhang, and A. Knizhnik Microelectron. Eng. 69 2003 130
38. Joint Committee of Powder Diffraction Standards, Card 43-1017.
39. Joint Committee of Powder Diffraction Standards, Card 21-0904.
40. Joint Committee of Powder Diffraction Standards, Card 08-0342.
41. G. Scarel, S. Spiga, C. Wiemer, G. Tallarida, S. Ferrari, and M. Fanciulli Mater. Sci. Eng. B 109 2004 11
42. M. Oshima, S. Toyoda, T. Okumura, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, and N. Hirashita Appl. Phys. Lett. 83 2003 2172
43. O. Renault, D. Samour, J.-F. Damlencourt, D. Blin, F. Martin, S. Marthon, N.T. Barrett, and P. Besson Appl. Phys. Lett. 81 2002 3627
44. O. Renault, D. Samour, D. Rouchon, Ph. Holliger, A.-M. Papon, D. Blin, and S. Marthon Thin Solid Films 428 2003 190
45. D.P. Norton Solid-State Electron. 47 2003 801
46. S.M. Sze Physics of semiconductor devices 2nd ed. 1981 Wiley New York 397
47. K. Kukli, K. Forsgren, M. Ritala, M. Leskelä, J. Aarik, and A. Hårsta J. Electrochem. Soc. 148 2001 F227
48. K. Kukli, M. Ritala, J. Aarik, T. Uustare, and M. Leskelä J. Appl. Phys. 92 2002 1833
49. G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J.C. Hooker, and T. Conard Appl. Phys. Lett. 84 2004 260
50. W.A. Hill, and C.C. Coleman Solid State Electron. 23 1980 987
51. G.K. Dalapati, S. Chatterjee, S.K. Samanta, and C.K. Maiti Appl. Surf. Sci. 210 2003 249
52. K. Kukli, M. Ritala, and M. Leskelä J. Electrochem. Soc. 148 2001 F35
53. M. Ritala, M. Leskelä, L. Niinistö, T. Prohaska, G. Friedbacher, and M. Grasserbauer Thin Solid Films 249 1994 155
54. K. Kukli, M. Ritala, M. Leskelä, T. Sajavaara, J. Keinonen, D. Gilmer, S. Bagchi, and L. Prabhu J. Non-Cryst. Solids 303 2002 35
55. S. Dueñas, H. Castán, H. Carcía, J. Barbolla, K. Kukli, J. Aarik, and A. Aidla Semicond. Sci. Technol. 19 2004 1141
56. H. Takeuchi, and T.-J. King J. Electrochem. Soc. 151 2004 H44
57. M. Copel, M. Gribelyuk, and E. Gusev Appl. Phys. Lett. 76 2000 436