Room-temperature deposited titanium silicate thin films for MIM capacitor applications

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 261-263

  Brassard, D ^a   Quellet, L ^b   El Khakani, M A ^a  

^a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

^b DALSA Semiconductor Inc   (Canada)

Author keywords

Capacitors; High ; Metal insulator metal (MIM); Sputtering; Titanium silicate (TiSiO4); Voltage coefficient of capacitance ( )

Indexed keywords

CAPACITANCE DENSITY; HIGH DIELECTRIC CONSTANTS; LOW DIELECTRIC; LOW-LEAKAGE CURRENT; METAL-INSULATOR-METAL (MIM); METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; ROOM TEMPERATURE; TITANIUM SILICATE; TITANIUM SILICATE (TISIO4); VOLTAGE COEFFICIENT OF CAPACITANCES; VOLTAGE LINEARITY; HIGH-K; METAL INSULATOR METALS;

CAPACITANCE; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; METAL INSULATOR BOUNDARIES; METALS; PERMITTIVITY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICATES; THIN FILMS; TITANIUM; TITANIUM COMPOUNDS; SPUTTERING;

MIM DEVICES; CAPACITORS;

EID: 34548019447     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.891754     Document Type: Article

References (16)

1. "The International Technology Roadmap for Semiconductors (ITRS)," in RF and Analog/Mixed-Signal Technologies for Wireless Communications Chapter. Austin, TX: Semicond. Ind. Assoc, 2005 Edition. [Online]. Available: http://www.itrs.net/
2. C. H. Ng, C. S. Ho, S. F. S. Chu, and S. C. Sun, "MIM capacitor integration for mixed-signal/RF applications," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1399-1409, Jul. 2005.
3. S. Van Huylenbroeck, S. Decoutere, R. Venegas, S. Jenei, and G. Winderickx, "Investigation of PECVD dielectrics for nondispersive metal-insulator-metal capacitors," IEEE Electron Device Lett., vol. 23, no. 4, pp. 191-193, Apr. 2002.
4. J. A. Babcock, S. G. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, "Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics," IEEE Electron Device Lett., vol. 22, no. 5, pp. 230-232, May 2001.
5. 2 for high-density MIM capacitors," IEEE Electron Device Lett., vol. 24, no. 7, pp. 442-444, Jul. 2003.
6. C. X. Zhu, B. J. Cho, and M. F. Li, "Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications," Chemical Vapor Deposition, vol. 12, no. 2/3, pp. 165-171, Mar. 2006.
7. 2 for high-precision MIM capacitor applications," IEEE Electron Device Lett., vol. 24, no. 6, pp. 387-389, Jun. 2003.
8. 2 dielectrics," IEEE Electron Device Lett., vol. 24, no. 2, pp. 63-65, Feb. 2003.
9. x dielectrics," IEEE Electron Device Lett., vol. 23, no. 4, pp. 185-187, Apr. 2002.
10. 5 films," J. Appl. Phys., vol. 90, no. 3, pp. 1501-1508, Aug. 2001.
11. 2 stacked dielectric," IEEE Electron Device Lett., vol. 25, no. 8, pp. 538-540, Aug. 2004.
12. 9 thin films for high-performance metalinsulator-metal capacitors," Appl. Phys. Lett., vol. 87, no. 11, p. 112902, Sep. 2005.
13. D. Brassard, D. K. Sarkar, M. A. El Khakani, and L. Ouellet, "Compositional effect on the dielectric properties of high-κ titanium silicate thin films deposited by means of a cosputtering process," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 24, no. 3, pp. 600-605, May/Jun. 2006.
14. "High-κ titanium silicate thin films grown by reactive magnetron sputtering for complementary metal-oxide-semiconductor applications," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 22, no. 3, pp. 851-855, May/Jun. 2004.
15. D. Brassard and M. A. El Khakani, "Pulsed-laser deposition of high-κ titanium silicate thin films," J. Appl. Phys., vol. 98, no. 5, p. 054912, Sep. 2005.
16. zO films due to the varying Hf to Ti ratio," J. Appl. Phys., vol.95, no. 10, pp. 5583-5590, May 2004.