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Volumn 4, Issue 7, 2007, Pages 2277-2280

Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates

Author keywords

[No Author keywords available]

Indexed keywords

GAN LAYERS; GAN SUBSTRATES; NITRIDE SEMICONDUCTORS;

EID: 34547593844     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674871     Document Type: Conference Paper
Times cited : (6)

References (7)
  • 7
    • 49749114918 scopus 로고    scopus 로고
    • PhD thesis, University of Bremen
    • T. Böttcher, PhD thesis, University of Bremen, 2002.
    • (2002)
    • Böttcher, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.