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Volumn 4, Issue 7, 2007, Pages 2277-2280
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Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
GAN LAYERS;
GAN SUBSTRATES;
NITRIDE SEMICONDUCTORS;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
GALLIUM NITRIDE;
NITRIDES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR MATERIALS;
GALLIUM ALLOYS;
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EID: 34547593844
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674871 Document Type: Conference Paper |
Times cited : (6)
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References (7)
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